Q. Which impurity should be added to pure semiconductor to make a P-type semiconductor?

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Q. Which impurity should be added to pure semiconductor to make an N-type semiconductor?

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Q. PN junction can be made by physically joining P type and N type semiconductor.

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Q. A bipolar junction transistor has beta=250 and base current=10 micro ampere. What is the collector current?

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Q. What happens to the collector current if the emitter current increases while no base voltage is applied?

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Q. Which terminal of the diode is common to the other two terminals of the diode?

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Q. Which is an example of bipolar junction transistor?

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Q. In bipolar junction transistors both electron and holes are responsible for conduction.

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Q. Three PN junctions is present in a bipolar junction transistor.

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Q. What is the minimum voltage required to make base emitter junction of a real silicon bipolar junction transistor in forward biased?

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Q. When bipolar junction transistor acts as an amplifier?

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Q. What are the parameters over which transfer characteristics curve of bipolar junction transistor is made in common emitter configuration?

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Q. What are the parameters over which Input characteristics curve of bipolar junction transistor is made in common emitter configuration?

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Q. A bipolar junction transistor has beta=100 and base current= 8 micro ampere. What is the collector current?

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Q. A bipolar junction transistor has collector current(Ic)=1.3 milli ampere and emitter current=1.5 milli ampere. What is the base current?

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Q. A bipolar junction transistor has emitter current(Ic)=1.6 milli ampere and collector current=1.47 milli ampere. What is the base current?

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Q. What is the value of current gain (α) where emitter current(Ic)=1.6 milli ampere; collector current=1.5 milli ampere and base current=0.1 milli ampere?

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Q. What is the value of current gain (α) where emitter current(Ic)=2 milli ampere; collector current=1.9 milli ampere and base current=0.1 milli ampere?

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Q. Which is the majority charge carrier in N-channel JFET?

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Q. Which type of channel is formed, between P-type source, N-type substrate and P-type drain terminal, when a positive voltage is applied on the gate terminal of an enhancement type MOSFET?

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