Q. Injection lasers operating in smaller wavelengths are subjected to increased carrier losses.

View solution

Q. Devices based on quaternary PbSnSeTe and their ternary compounds, emit at wavelength?

View solution

Q. Replacing Sn with Eu, Cd or Ge in some _________________ the band gap.

View solution

Q. Lasing obtained in __________ when 191 mW of pump light at a wavelength of 0.477 μm is launched into laser.

View solution

Q. The thulium doped fiber laser when pumped with alexandrite laser output at 0.786 μm, the laser emits at ___________

View solution

Q. The diode-cladding-pumped Erbium praseodymium-doped fluoride device operates at wavelength.

View solution

Q. A technique based on inter-sub band transition is known as ___________

View solution

Q. In a QC laser, a same electron can emit number of photons.

View solution

Q. The phenomenon resulting in the electrons to jump from one state to another each time emitting of photon is known as ___________

View solution

Q. A QC laser is sometimes referred as ___________

View solution

Q. In QC lasers, it is possible to obtain different output signal wavelengths. This can be achieved by ___________

View solution

Q. QC lasers ______________ the performance characteristics.

View solution

Q. An MQW cascaded laser is more advantageous because of ___________

View solution

Q. The absence of _______________ in LEDs limits the internal quantum efficiency.

View solution

Q. The excess density of electrons Δn and holes Δpin an LED is ____________

View solution

Q. The hole concentration in extrinsic materials is _________ electron concentration.

View solution

Q. The carrier recombination lifetime becomes majority or injected carrier lifetime.

View solution

Q. In a junction diode, an equilibrium condition occurs when ____________

View solution

Q. Determine the total carrier recombination lifetime of a double heterojunction LED where the radioactive and nonradioactive recombination lifetime of minority carriers in active region are 70 ns and 100 ns respectively.

View solution

Q. Determine the internal quantum efficiency generated within a device when it has a radiative recombination lifetime of 80 ns and total carrier recombination lifetime of 40 ns.

View solution