Q. Compute depletion region width of a p-i-n photodiode with 3 dB bandwidth of 1.91×10⁸ Hz and carrier velocity of 2×10⁴ ms⁻¹.

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Q. ___________ has more sophisticated structure than p-i-n photodiode.

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Q. The phenomenon leading to avalanche breakdown in reverse-biased diodes is known as _______

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Q. _______ is fully depleted by employing electric fields.

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Q. At low gain, the transit time and RC effects ________

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Q. At high gain, avalanche buildup time ________

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Q. Often __________ pulse shape is obtained from APD.

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Q. Fall times of 1 ns or more are common.

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Q. Determine Responsivity of a silicon RAPD with 80% efficiency, 0.7 μm wavelength.

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Q. Compute wavelength of RAPD with 70% efficiency and Responsivity of 0.689 A/w.

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Q. Compute photocurrent of RAPD having optical power of 0.7 μw and responsivity of 0.689 A/W.

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Q. Determine optical power of RAPD with photocurrent of 0.396 μA and responsivity of 0.49 A/w.

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Q. Determine the Responsivity of optical power of 0.4 μW and photocurrent of 0.294 μA.

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Q. Compute multiplication factor of RAPD with output current of 10 μA and photocurrent of 0.369 μA.

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Q. Determine the output current of RAPD having multiplication factor of 39 and photocurrent of 0.469 μA.

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Q. Compute the photocurrent of RAPD having multiplication factor of 36.7 and output current of 7 μA.

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Q. In the development of photodiodes for mid-infrared and far-infrared transmission systems, lattice matching has been a problem when operating at wavelengths ____________

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Q. What is generally used to accommodate a lattice mismatch?

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Q. HgCdTe material system is utilized to fabricate long-wavelength photodiodes.

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Q. Avalanche photodiodes based on HgCdTe are used for ______________ in both the near and far infrared.

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