Q. Monolithic integration for optical sources are confined to the use of __________ semiconductors.

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Q. Circuits fabricated from GaAs or AlGaAs operate in wavelength region of __________

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Q. The OEICs realization __________ as compared to the other developments in IO.

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Q. Compositional and structural differences between photonic and electronic devices __________

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Q. To avoid large chip __________ devices are used.

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Q. Devices operating at transmission rates greater than 40 Gb/s are _________

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Q. HEMT based __________ have a spot-size convertor with a photodiode.

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Q. P-I-N photoreceiver based on HEMT is integrated with _________ guiding layers.

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Q. An optical power splitter integrated with optical waveguide amplifier is more useful.

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Q. The use of intelligent optical switches is necessary.

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Q. The wafer scale replication technology uses ____________

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Q. ___________ is useful for production of both planar micro-optical elements and stacked optical microsystems.

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Q. Optical interconnection between optoelectronic device is achieved in _________

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Q. Multilevel interconnections are incorporated in _______

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Q. When there is M number of WDM channels present at N input ports, then the output port 1 produces a _________

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Q. ___________ provides a series of optical processing functions.

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Q. ___________ comprise of Fabry-Perot cavity.

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Q. The optical path length in nonlinear medium is integer number of ______ wavelength.

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Q. As compared to laser, the value of _________ in the cavity controls the optical transmission.

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Q. ___________ are able to latch between two distinct optical states.

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