Question

Assertion (A): Ionic solids, in general, have no electrical conductivity.

Reason (R): In ionic solids, electrons are tightly bound to the nucleus.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Answer: (a).Both A and R are true and R is correct explanation of A

Interact with the Community - Share Your Thoughts

Uncertain About the Answer? Seek Clarification Here.

Understand the Explanation? Include it Here.

Q. Assertion (A): Ionic solids, in general, have no electrical conductivity. Reason (R): In ionic solids, electrons are tightly bound to the nucleus.

Similar Questions

Explore Relevant Multiple Choice Questions (MCQs)

Q. Tesla is a unit of

Q. If the operating temperature increases by 10°C, the rate of deterioration of solid dielectric becomes

Q. In which of the following semiconductor are holes minority carriers

Q. At 0 K, silicon and germanium behave like monoatomic crystals.

Q. Assertion (A): Acceptor extrinsic semiconductor has higher conductivity than intrinsic semiconductor.

Reason (R): Addition of p-type impurity produces an allowable discrete energy level just above valence band.

Q. When temperature is above ferromagnetic Curie temperature, a ferromagnetic material

Q. A magnet does not attract

Q. Bitter powder patterns prove the existence of domains.

Q. Assertion (A): An amorphous material is obtained when mobility of atoms is inhibited during solidification.

Reason (R): Crystalline state is a natural state for most solids.

Q. An air cored inductance is a

Q. The number of valence electrons in silicon atom is

Q. ∈ᵣ is determined by the atomic structure of the dielectric.

Q. A rare gas has N atoms per m³. If electronic polarizability of single atom of this gas is αe, then

Q. The colour code on a carbon resistor is brown-black-red-gold. The value of resistance is

Q. M = (μᵣ - 1)H.

Q. Silicon and germanium are elements in the

Q. A sample of N type semiconductor has an electron density of 6.25 x 10¹⁸/cm³ at 300 K. If intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density is

Q. Assertion (A): In a conductor, current density remains constant in time as long as E is constant.

Reason (R): In a conductor, J = σE.

Q. Hysteresis curve is associated with motion of domain walls.

Q. The number of protons in germanium atom is

Recommended Subjects

Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.

Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!