Q. An atom of a rare gas is placed is an electric field E. Then

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Q. In van der walls crystals, there exists a high degree of stability of the outer electron shell.

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Q. As per temperature limits, the number of categories of solid dielectrics are

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Q. At room temperature the number of conducting electrons in an intrinsic semiconductor

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Q. Assertion (A): The angular momentum of an atom is due to three contributions viz. orbital, electron spin and nuclear spin.

Reason (R): The nuclear spin magnetic moment is much more than electron spin magnetic moment.

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Q. If WF is the Fermi level, then in a metal at T = 0

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Q. Silicon and germanium have diamond structure. The number of atoms in a volume equal to a³ where a is the edge of elementary cube are

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Q. If the radius of electron cloud around the nucleus of a rare gas atom is R, the electronic polarizability of the atom is porportional to

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Q. By inserting a plate of dielectric between the plates of a parallel plate capacitor, the energy stored in the capacitor is increased five times. The dielectric constant of material is

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Q. Debye temperature of metals is

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Q. As the viscosity of a liquid increases, the relaxation time

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Q. A wire is carrying current I. The field intensity H at a distance r from the wire

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Q. The materials which become polarized on the application of mechanical stress are called piezoelectric.

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Q. The rule that resistivity of conductors can be separated into two parts viz. temperature independent and temperature dependent is known as

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Q. Above a certain temperature, the specific heat of a metal becomes constant. This temperature is called

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Q. A dielectric material must be

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Q. Spontaneous magnetisation is characteristic of ferromagnetic materials.

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Q. A leakage capacitor can be represented by a capacitance C and resistance R in parallel C.

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Q. Electric dipole moment is expressed in debye unit.

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Q. A vacant electronic state moves in the same direction as would a positive charge carrier.

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