Q. A transistor in CE mode is in saturation region. Then the collector is almost at

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Q. The semi-conductor type 2 N 34 indicates

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Q. The emitter bias largely depends on

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Q. A limiter circuit can be built using a diode and resistance.

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Q. In saturation region JFET acts like a

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Q. FET can used in

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Q. Each of two cascaded stages has a voltage gain of 30. The overall gain is

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Q. A two stage amplifier has an upper cutoff frequency of 2 MHz and a lower cutoff frequency of 2 MHz and a lower cut off frequency of 30 Hz. If both stages are similar, their individual upper and lower cut off frequencies respectively are

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Q. A bipolar transistor is a __________ controlled devices whereas a FET is a __________ controlled devices.

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Q. The input impedance of a non-inverting amplifier is very low.

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Q. RC oscillator can be used upto

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Q. In a N-P-N transistor of the emitter junction is reverse biased and collector junction is also reversed biased, the transistor will operate in

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Q. Wide banding technique is employed in the

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Q. Assertion (A): The maximum efficiency of a class B push pull amplifier is 78.5%

Reason (R): A current mirror uses a compensating diode in parallel with the emitter diode

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Q. Which of the following are difficult to be fabricated in a monolithic IC?

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Q. In an op-amp a common mode signal is applied to

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Q. The ripple factor of a full wave rectifier is about 0.5.

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Q. Which of the following op-amp circuits has zero resistance in the feedback path?

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Q. In an LC filter, the ripple factor,

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Q. CE mode input V-I characteristic can be shown by a plot of

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