Q. Consider the following rectifier circuits :

1. half-wave rectifier without filter
2. full-wave rectifier without filter
3. full-wave rectifier with series inductance filter
4. full-wave rectifier with capacitance filter.

The sequence of these rectifier circuits in decreasing order of their ripple factor is

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Q. When a transistor is to be at a temperature above 25°C

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Q. Assertion (A): In monolithic IC the components are part of one chip

Reason (R): An op-amp is a high gain dc amplifier

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Q. The most widely used LC oscillator is

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Q. Which of the following statement is wrong?

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Q. The disadvantage of FET over BJT is

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Q. V MOS have the advantage of

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Q. For an op-amp source follower circuit

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Q. In CE approximation, the upper end of d.c. load line is called the __________ point and the lower end is the __________ point.

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Q. In a class C power amplifier

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Q. A low noise device is most important

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Q. To draw dc equivalent circuit for a CE amplifier circuit we should

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Q. The maximum efficiency of class A amplifier is

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Q. In a cascade amplifier, the intermediate stages are always in

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Q. For an amplifier the power gain in decibels will be equal to voltage gain in decibels only when

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Q. 2N 2430 could be a

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Q. If re is ac resistance of diode, the Thevenin input impedance of a differential amplifier is

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Q. The depletion type MOSFET can operate in

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Q. One of the following can be used to generate a pulse whenever triggered

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Q. Which amplifier has the higher power gain?

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