Q. When a transistor is connected in common emitter mode, it with have

View solution

Q. The noise figure of FET circuit is

View solution

Q. The encapsulation of transistor is necessary for

View solution

Q. In CE approximately, the active region is where the collector curves are

View solution

Q. A certain transistor has αdc of 0.98 and a collectors leakage current of 5 μA. If IE = 1 mA, the base current will be

View solution

Q. The signal input to a given amplifier is made up of 100 mΩ signal power and 1 mΩ noise power. The amplifier contributes an additional 100 mΩ of noise and has a power gain of 20 dB. The input signal-to noise ratio is

View solution

Q. Assertion (A): A good op-amp should have very large band width

Reason (R): An ideal op-amp should have infinite input resistance and zero output resistance

View solution

Q. In all base driver amplifiers

View solution

Q. The horizontal intercept of dc load line is the same as ideal

View solution

Q. In a BJT amplifier circuit the size of coupling capacitor depends on

View solution

Q. A silicon sample A is doped with 10¹⁸ Atoms/cm³ of Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

View solution

Q. Which of the following circuit has the greatest bandwidth?

View solution