Q. Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the answer using the following codes :

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Q. Light dependent resistor is

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Q. The derating factor for a BJT transistor is about

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Q. An intrinsic silicon sample has 2 million free electrons. The number of holes in the sample is

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Q. Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.

Reason (R): Capacitance of any layer is inversely proportional to thickness.

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Q. In an n type semiconductor

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Q. Mobility of electrons and holes are equal.

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Q. Which of the following is basically a voltage controlled capacitance?

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Q. When the i-v curve of a photodiode passes through origin the illumination is

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Q. An n type silicon bar 0.1 cm long and 100 μm² in cross-sectional area has a majority carrier concentration of 5 x 10²ᴼ/m³ and the carrier mobility is 0.13 mᴼ/V-s at 300k. If the charge of an electron is 1.6 x 10¯¹⁹ coulomb, then the resistance of the bar is

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Q. The threshold voltage of a MOSFET can be lowered by

1. using thin gate oxide
2. reducing the substrate concentration
3. increasing the substrate concentration.

Of the above statement

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Q. In which device does the extent of light controls the conduction

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Q. A Varactor diode has

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Q. The most important set of specifications of transformer oil includes

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Q. Assertion (A): In Hall effect the O.C. transverse voltage developed by a current carrying semiconductor with a steady magnetic field perpendicular to the current direction has opposite signs for n and p semiconductors.

Reason (R): The magnetic field pushes both holes and electrons in the same direction.

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Q. A voltage of 9 V is applied in forward direction to a semiconductor diode in series with a load resistance of 1000 Ω. The voltage across the load resistance is zero. It indicates that

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Q. If the drift velocity of holes under a field gradient of 100 V/m in 5 m/s, their mobility (in SI units) is

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Q. In a bipolar transistor

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Q. If for a silicon n-p-n transistor, the base to emitter voltage (VBE) is 0.7 V and the collector to base voltage VCB is 0.2 Volt, then the transistor is operating in the

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Q. The number of doped regions in a bipolar junction transistor is

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