Q. Assertion (A): A high junction temperature may destroy a diode.

Reason (R): As temperature increases the reverse saturation current increases.

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Q. A Si sample is doped with a fixed number of group N impurities. The electron density n is measured from 4 K to 1200 k for the sample. Which one of the following is correct?

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Q. Assertion (A): In design of circuit using BJT, a derating factor is used.

Reason (R): As the ambient temperature increases, heat dissipation becomes slower.

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Q. If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is

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Q. In a P type silicon sample, the hole concentration is 2.25 x 10¹⁵ / cm³. If the intrinsic carrier concentration is 1.5 x 10¹ᴼ/ cm³ the electron concentration is

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Q. The behaviour of a JFET is similar to that of

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Q. Dielectric strength of polythene is around

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Q. Resistivity of hard drawn copper is

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Q. The channel of JFET consists of

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Q. In a bipolar junction transistor αdc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is

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Q. The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be

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Q. As temperature increases the forbidden gap in silicon increases.

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Q. Assertion (A): Germanium is more commonly used than silicon.

Reason (R): Forbidden gap in germanium is less than that in silicon.

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Q. Which of the following devices has substrate?

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Q. Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.

Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.

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Q. In degenerate p type semiconductor material, the Fermi level,

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Q. Consider the following statements: The function of oxide layer in an IC device is to

1. mask against diffusion or non implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements:

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Q. An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is

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Q. In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about

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Q. Photoconductive devices uses

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