Q. For a photo conductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in the intensities of optical illumination results in

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Q. Ferrities are particularly suited for high frequency applications because of their

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Q. In intrinsic semiconductor, the fermi level

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Q. Electromagnetic waves transport

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Q. In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.

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Q. When P-N junction is in forward bias, by increasing the battery voltage

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Q. A semiconductor in its purest form called

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Q. Which of the following is an active device?

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Q. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current.

Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.

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Q. If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.

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Q. The output, V-I characteristics of an Enhancement type MOSFET has

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Q. Piezoelectric quartz crystal resonators find application where

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Q. The forbidden energy gap between the valence band and conduction band will be least in case of

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Q. If too large current passes through the diode

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Q. Assertion (A): Intrinsic semiconductor is an insulator at 0 K.

Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.

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Q. A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of

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Q. Dynamic resistance of diode is dv/di

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Q. The presence of some holes in an intrinsic semiconductor at room temperature is due to

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Q. Holes act like

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Q. Assertion (A): Silicon is less sensitive to changes in temperature than germanium.

Reason (R): It is more difficult to produce minority carriers in silicon than in germanium.

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