Materials and Components MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Materials and Components, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Materials and Components MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Materials and Components mcq questions that explore various aspects of Materials and Components problems. Each MCQ is crafted to challenge your understanding of Materials and Components principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Materials and Components MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Materials and Components. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Materials and Components knowledge to the test? Let's get started with our carefully curated MCQs!

Materials and Components MCQs | Page 41 of 44

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Q401.
Assertion (A): Electron concentration n, hole concentration p and charge concentration ni are related by ni² = np.

Reason (R): p type semiconductor is obtained by adding trivalent impurity to intrinsic semiconductor.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not correct explanation of A
Q402.
The temperature at which some materials become superconductors is called

a.

Transition temperature

b.

Curie temperature

c.

Neel temperature

d.

Onnes temperature

Discuss
Answer: (a).Transition temperature
Q403.
In Fermi-Dirac statistics, the probability of electron occupation of an energy level equal to Fermi level is

a.

0

b.

0.25

c.

0.5

d.

1

Discuss
Answer: (c).0.5
Q404.
The quantum numbers associated with electron motion are designed as

a.

a, b, c

b.

h, k, l

c.

n, m, l

d.

h, n, l

Discuss
Answer: (c).n, m, l
Q405.
The carrier mobility in a semiconductor is 0.4 m²/Vs. Its diffusion constant at 300 K will be (in m²/s)

a.

0.40

b.

0.16

c.

0.04

d.

0.01

Discuss
Answer: (d).0.01
Q406.
Which of these has lowest dielectric strength?

a.

Dry air

b.

Wet air

c.

Cotton

d.

Paper

Discuss
Answer: (b).Wet air
Q407.
The maximum temperature limit of class B insulation is

a.

90°C

b.

105°C

c.

120°C

d.

130°C

Discuss
Answer: (d).130°C
Q408.
Resistivity of metals consists of two parts, one part constant and the other temperature dependent.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
Q409.
The number of valence electrons in germanium atom is

a.

4

b.

2

c.

1

d.

zero

Discuss
Answer: (a).4
Q410.
Assertion (A): ∈₀ has the dimensions of farad per meter.

Reason (R): D = ∈₀∈ᵣ E.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not correct explanation of A
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