Materials and Components MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Materials and Components, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Materials and Components MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Materials and Components mcq questions that explore various aspects of Materials and Components problems. Each MCQ is crafted to challenge your understanding of Materials and Components principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Materials and Components MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Materials and Components. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Materials and Components knowledge to the test? Let's get started with our carefully curated MCQs!

Materials and Components MCQs | Page 8 of 44

Discover more Topics under Electronics and Communication Engineering

Q71.
If the diameter of a wire is doubled, its current carrying capacity becomes

a.

one-fourth

b.

half

c.

twice

d.

four times

Discuss
Answer: (d).four times
Q72.
The law J = σE, where J is current density, σ is electrical conductivity and E is field strength is

a.

Ohm's law

b.

Gauss law

c.

Ampere's law

d.

Biot-Savart law

Discuss
Answer: (a).Ohm's law
Q73.
Assertion (A): Silicon is less sensitive to changes in temperature than germanium.
Reason (R): Cut in voltage in silicon is less than that in germanium.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (c).A is true but R is false
Q74.
Material which lack permanent magnetic dipoles are known as

a.

paramagnetic

b.

diamagnetic

c.

ferromagnetic

d.

ferrimagnetic

Discuss
Answer: (b).diamagnetic
Q75.
The attraction between the nucleus and valence electron of copper atom is

a.

zero

b.

weak

c.

strong

d.

either zero or strong

Discuss
Answer: (b).weak
Q76.
If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

a.

the majority carrier density is doubled

b.

the minority carrier density is doubled

c.

the minority carrier density becomes 4 times the original value

d.

both the majority and minority carrier densities double

Discuss
Answer: (d).both the majority and minority carrier densities double
Q77.
There is no hysteresis phenomenon is any dielectric material.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (b).False
Q78.
The units of μ₀ and μᵣ are

a.

H/m for both

b.

H/m for μᵣ and no units for μ₀

c.

H/m for μ₀ and no units for μᵣ

d.

Wb/m for μ₀ and no units for μᵣ

Discuss
Answer: (c).H/m for μ₀ and no units for μᵣ
Q79.
In metals the valence electron wave functions are strongly perturbed by the presence of neighbouring atoms.

a.

True

b.

False

c.

May be True or False

d.

Can't say

Discuss
Answer: (a).True
Q80.
The classes of solid dielectrics are

a.

A, B, C, D, E, F, H

b.

A E B F H C D

c.

Y A E B F H C

d.

A E B F H C

Discuss
Answer: (c).Y A E B F H C
Page 8 of 44