Solid State Electronic Devices MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Solid State Electronic Devices, a fundamental topic in the field of Mechatronics. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Solid State Electronic Devices MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Solid State Electronic Devices mcq questions that explore various aspects of Solid State Electronic Devices problems. Each MCQ is crafted to challenge your understanding of Solid State Electronic Devices principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Mechatronics tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Solid State Electronic Devices MCQs are your pathway to success in mastering this essential Mechatronics topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Solid State Electronic Devices. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Solid State Electronic Devices MCQs | Page 4 of 11

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Q31.
A bipolar junction transistor has beta=250 and base current=10 micro ampere. What is the collector current?
Discuss
Answer: (c).2.5 milli ampere
Q32.
What happens to the collector current if the emitter current increases while no base voltage is applied?
Discuss
Answer: (c).No current
Discuss
Answer: (a).Base is common to collector and emitter
Q34.
Which is an example of bipolar junction transistor?
Discuss
Answer: (a).BC547B
Q35.
In bipolar junction transistors both electron and holes are responsible for conduction.
Discuss
Answer: (a).True
Q36.
Three PN junctions is present in a bipolar junction transistor.
Discuss
Answer: (b).False
Q37.
What is the minimum voltage required to make base emitter junction of a real silicon bipolar junction transistor in forward biased?
Discuss
Answer: (a).0.7 volts
Discuss
Answer: (a).When base emitter terminal is forward biased and base collector terminal is reverse bias
Q39.
What are the parameters over which transfer characteristics curve of bipolar junction transistor is made in common emitter configuration?
Discuss
Answer: (d).Collector to Emitter Voltage and Collector current
Q40.
What are the parameters over which Input characteristics curve of bipolar junction transistor is made in common emitter configuration?
Discuss
Answer: (d).Base to Emitter Voltage and base current