Q. Quantum efficiency is a function of photon wavelength.

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Q. Determine quantum efficiency if incident photons on photodiodes is 4*10¹¹ and electrons collected at terminals is 1.5*10¹¹?

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Q. A photodiode has quantum efficiency of 45% and incident photons are 3*10¹¹. Determine electrons collected at terminals of device.

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Q. The quantum efficiency of photodiode is 40% with wavelength of 0.90*10⁻⁶. Determine the responsivity of photodiodes.

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Q. The Responsivity of photodiode is 0.294 AW⁻¹ at wavelength of 0.90 μm. Determine quantum efficiency.

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Q. Determine wavelength of photodiode having quantum efficiency of 40% and Responsivity of 0.304 AW⁻¹.

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Q. Determine wavelength at which photodiode is operating if energy of photons is 1.9*10⁻¹⁹J?

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Q. Determine the energy of photons incident on a photodiode if it operates at a wavelength of 1.36 μm.

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Q. Determine Responsivity of photodiode having o/p power of 3.55 μm and photo current of 2.9 μm.

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Q. Determine incident optical power on a photodiode if it has photocurrent of 2.1 μA and responsivity of 0.55 A/W.

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Q. If a photodiode requires incident optical power of 0.70 A/W. Determine photocurrent.

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Q. The width of depletion region is dependent on ___________ of semiconductor.

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Q. Electron-hole pairs are generated in ___________

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Q. The diffusion process is _____________ as compared with drift.

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Q. Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30 μm and electron drift velocity of 10⁵ ms⁻¹.

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Q. Determine intrinsic region width for a photodiode having drift time of 4×10⁻¹⁰ s and electron velocity of 2×10⁻¹⁰ ms⁻¹.

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Q. Determine velocity of electron if drift time is 2×10⁻¹⁰ s and intrinsic region width of 25×10⁻⁶ μm.

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Q. Compute junction capacitance for a p-i-n photodiode if it has area of 0.69×10⁻⁶ m², permittivity of 10.5×10⁻¹³ Fcm⁻¹ and width of 30 μm.

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Q. Determine the area where permittivity of material is 15.5×10⁻¹⁵ Fcm⁻¹ and width of 25×10⁻⁶ and junction capacitance is 5 pF.

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Q. Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4 pF and material permittivity of 16.5×10⁻¹³ Fcm⁻¹ and area of 0.55×10⁻⁶ m².

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