Q. The diffusion process is _____________ as compared with drift.

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Q. Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30 μm and electron drift velocity of 10⁵ ms⁻¹.

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Q. Determine intrinsic region width for a photodiode having drift time of 4×10⁻¹⁰ s and electron velocity of 2×10⁻¹⁰ ms⁻¹.

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Q. Determine velocity of electron if drift time is 2×10⁻¹⁰ s and intrinsic region width of 25×10⁻⁶ μm.

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Q. Compute junction capacitance for a p-i-n photodiode if it has area of 0.69×10⁻⁶ m², permittivity of 10.5×10⁻¹³ Fcm⁻¹ and width of 30 μm.

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Q. Determine the area where permittivity of material is 15.5×10⁻¹⁵ Fcm⁻¹ and width of 25×10⁻⁶ and junction capacitance is 5 pF.

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Q. Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4 pF and material permittivity of 16.5×10⁻¹³ Fcm⁻¹ and area of 0.55×10⁻⁶ m².

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Q. Determine permittivity of p-i-n photodiode with junction capacitance of 5 pF, area of 0.62×10⁻⁶ m² and intrinsic region width of 28 μm.

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Q. Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98×10⁸ Hz.

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Q. Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.

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Q. Determine maximum response time for a p-i-n photodiode having width of 28×10⁻⁶ m and carrier velocity of 4×10⁴ ms⁻¹.

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Q. Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9×10⁸ Hz and depletion region width of 24 μm.

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Q. Compute depletion region width of a p-i-n photodiode with 3 dB bandwidth of 1.91×10⁸ Hz and carrier velocity of 2×10⁴ ms⁻¹.

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Q. ___________ has more sophisticated structure than p-i-n photodiode.

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Q. The phenomenon leading to avalanche breakdown in reverse-biased diodes is known as _______

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Q. _______ is fully depleted by employing electric fields.

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Q. At low gain, the transit time and RC effects ________

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Q. At high gain, avalanche buildup time ________

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Q. Often __________ pulse shape is obtained from APD.

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Q. Fall times of 1 ns or more are common.

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