Q. A phototransistor has collector current of 18 mA, incident optical power of 128 μW with a wavelength of 1.24 μm. Determine an optical gain.

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Q. Phototransistors based on hetero-junction using _________ material are known as waveguide phototransistors.

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Q. A ________ is created by hetero-junction at collector-base junction.

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Q. _______ emitter-base and collector-base junction capacitances is achieved by use of hetero-structure along with _________ base resistance.

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Q. A large secondary current _________________ in n-p-n InGaAs phototransistor is achieved.

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Q. The _____________ is photosensitive to act as light gathering element.

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Q. There must be improvement in __________ of an optical fiber communication system.

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Q. __________ is less than or unity for photo detectors.

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Q. The important parameter for exciting an electron with energy required from valence band to conduction band is?

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Q. When determining performance of a photo detector ___________ is often used.

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Q. The detection mechanism in ____________ relies on photo excitation of electrons from confined states in conduction band quantum wells.

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Q. Avalanche photodiodes based on HgCdTe are used for ______________ in both the near and far infrared.

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Q. HgCdTe material system is utilized to fabricate long-wavelength photodiodes.

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Q. What is generally used to accommodate a lattice mismatch?

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Q. In the development of photodiodes for mid-infrared and far-infrared transmission systems, lattice matching has been a problem when operating at wavelengths ____________

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Q. Compute the photocurrent of RAPD having multiplication factor of 36.7 and output current of 7 μA.

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Q. Determine the output current of RAPD having multiplication factor of 39 and photocurrent of 0.469 μA.

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Q. Compute multiplication factor of RAPD with output current of 10 μA and photocurrent of 0.369 μA.

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Q. Determine the Responsivity of optical power of 0.4 μW and photocurrent of 0.294 μA.

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Q. Determine optical power of RAPD with photocurrent of 0.396 μA and responsivity of 0.49 A/w.

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