Q. What is the main benefit of the waveguide structure over conventional hetero-junction phototransistor?

View solution

Q. Waveguide phototransistors utilize a ___________ waveguide layer under the _________ transistor region.

View solution

Q. The _____________ at emitter-base junction gives good emitter base injection efficiency.

View solution

Q. The n-p-n hetero-junction phototransistor is grown using ______________

View solution

Q. Which of the following is the difference between the n-p-n and conventional bipolar transistor?

View solution

Q. The detection mechanism in the ____________ photo-detector includes inter sub-band transitions.

View solution

Q. For a phototransistor having gain of 116.5, wavelength of 1.28 μm, optical power 123 μW. Determine collector current.

View solution

Q. A phototransistor has collector current of 18 mA, incident optical power of 128 μW with a wavelength of 1.24 μm. Determine an optical gain.

View solution

Q. Phototransistors based on hetero-junction using _________ material are known as waveguide phototransistors.

View solution

Q. A ________ is created by hetero-junction at collector-base junction.

View solution

Q. _______ emitter-base and collector-base junction capacitances is achieved by use of hetero-structure along with _________ base resistance.

View solution

Q. A large secondary current _________________ in n-p-n InGaAs phototransistor is achieved.

View solution

Q. The _____________ is photosensitive to act as light gathering element.

View solution

Q. There must be improvement in __________ of an optical fiber communication system.

View solution

Q. __________ is less than or unity for photo detectors.

View solution

Q. The important parameter for exciting an electron with energy required from valence band to conduction band is?

View solution

Q. When determining performance of a photo detector ___________ is often used.

View solution

Q. The detection mechanism in ____________ relies on photo excitation of electrons from confined states in conduction band quantum wells.

View solution

Q. Avalanche photodiodes based on HgCdTe are used for ______________ in both the near and far infrared.

View solution

Q. HgCdTe material system is utilized to fabricate long-wavelength photodiodes.

View solution