Q. Passive devices are fabricated by __________ technique.

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Q. Strip pattern in waveguide structures is obtained through ____________

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Q. Propagation losses in slab and strip waveguides are smaller than the single mode fibre losses.

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Q. A passive Y-junction beam splitter is fabricated from __________

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Q. A passive Y-junction beam splitter is also used as a switch.

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Q. The linear variation of refractive index with the electric field is known as the ________

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Q. Planar waveguides are used to produce _______ coupler.

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Q. Monolithic integration for optical sources are confined to the use of __________ semiconductors.

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Q. Circuits fabricated from GaAs or AlGaAs operate in wavelength region of __________

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Q. The OEICs realization __________ as compared to the other developments in IO.

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Q. Compositional and structural differences between photonic and electronic devices __________

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Q. To avoid large chip __________ devices are used.

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Q. Devices operating at transmission rates greater than 40 Gb/s are _________

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Q. HEMT based __________ have a spot-size convertor with a photodiode.

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Q. P-I-N photoreceiver based on HEMT is integrated with _________ guiding layers.

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Q. An optical power splitter integrated with optical waveguide amplifier is more useful.

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Q. The use of intelligent optical switches is necessary.

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Q. The wafer scale replication technology uses ____________

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Q. ___________ is useful for production of both planar micro-optical elements and stacked optical microsystems.

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Q. Optical interconnection between optoelectronic device is achieved in _________

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