Q. The output V0 in figure is

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Q. The transistor of following figure in Si diode with a base current of 40 μA and ICBO = 0, if VBB = 6V, RE = 2 kΩ and β = 90, IBQ = 20 μA then RB =

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Q. In the amplifier circuit of figure hfe = 100 and hie = 1000 Ω. The voltage gain of amplifier is about

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Q. In figure what is the base current if VBE = 0.7 V

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Q. In figure ID = 4 mA. Then VS =

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Q. In figure what is value of IC if βdc = 100. Neglect VBE

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Q. In figure the saturation collector current is

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Q. In figure v1 = 8 V and v2 = 8 V. Which diode will conduct?

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Q. Si transistor of following figure has a = 0.9 and ICE= 0, VEE = 5 V and VCC = 13 V, then RE will be if IEQ = 1 mA

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Q. The 'h' parameters of the circuit shown in the figure are hib = 25 Ω, hfb = 0.999 and hob = 10¯⁶Ω The Voltage gain is

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Q. Study the circuit of figure and examine the following statements:

1. It is an active low pass finer.
2. It is a second order filter.
3. The change in gain is 40 dB/decade.

Which of the above statements are correct?

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Q. In a circuit of figure, Vs = 10 cos(ωt) power drawn by the 2Ω resistor is 4 watts. The power factor is

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Q. In the op-amp circuit of figure, V0 =

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Q. Figure shows the self bias circuit for CE amplifier and its equivalent circuit. VBB and RB respectively are

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Q. Figure is a 24 Vr stabilized power supply. The zener is 24 V, 600 mW. The minimum zener current is 10 mA. Proper values R and maximum load current are

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Q. In figure as the load resistance is changed

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Q. In figure, voltage across R2 = + 10 V. If VBE = 0.7 V and VE = 0.7 V and RE = 10 kΩ, current through RE is

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Q. In figure, transistor βdc = 100 and LED voltage when it is conducting is 2 V. Then the base current which saturates the transistor is

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Q. In figure the dc emitter current of each transistor is about

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Q. Assume that op-amp in figure is ideal. If input Vi is triangular, the output V0 will be

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