Q. A permeable substance is one

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Q. When subjected to alternating stresses, an insulating material is characterised by complex dielectric constant ∈'r - j∈"r . In such materials, the dielectric losses under alternating stress is proportional

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Q. In carbon resistor colour code, the third band is red. It indicates

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Q. Rochelle salt is a ferroelectric material.

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Q. Paramagnetic materials have permanent magnetic dipoles but interaction between neighbouring dipoles is negligible.

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Q. Assertion (A): If difference between static and optical dielectric constant is high, the mechanical compressiblity of that material is also high.
Reason (R): For soft ions, ionic polarization per unit field is higher than that of hard ions.

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Q. In crystalline solids, atoms are stacked in a regular manner.

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Q. The temperature below which certain materials are antiferromagnetic and above which they are paramagnetic is called

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Q. In metals, the average drift velocity of electron per unit field is called mobility.

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Q. Ferrites have

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Q. In intrinsic semiconductors, the number of free electrons is equal to the number of mobile holes.

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Q. Assertion (A): Relaxation time and mean time between collisions are equal when scattering is isotropic.

Reason (R): Mean free path of an electron λ, velocity of electron v and mean time between collisions tc are related as λ = vTc.

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Q. Assertion (A): Copper is a monoatomic solid.

Reason (R): In a metal the valence electrons belong to all atoms.

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Q. The heat developed per m³ per second (W) in a conductor having a conductivity σ and a field E is

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Q. The number of valence electrons in acceptor impurity are

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Q. If q is charge on an electron, R is radius of electron orbit and ω is angular velocity of electron rotation, the magnetic dipole moment of electron in orbit is

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Q. In a homogeneous magnetic field H of a solenoid, the core carries a magnetic dipole moment M per unit volume equal to

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Q. The field pattern of a solenoid is similar to that of bar magnet.

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Q. Assertion (A): Silicon is the most favoured semiconductor material.
Reason (R): PIV for silicon diode is more than that for germanium diode.

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Q. Assertion (A): When cathode temperature is increased from 2500 K to 2550 K, thermionic emission current may increase by about 50%.
Reason (R): Thermionic emission current ∝ T² e^(-Ew/kT).

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