Question
Reason (R): For rare gas, ∈₀(∈ᵣ - 1) E = Nαe, where N is number of atoms/m³ and αe is electronic polarizability of material.
a.
Both A and R are true and R is correct explanation of A
b.
Both A and R are true but R is not correct explanation of A
c.
A is true but R is false
d.
A is false but R is true
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. Assertion (A): Electronic polarizability increases as atoms becomes larger. Reason (R): For rare gas, ∈₀(∈ᵣ - 1) E = Nαe, where N is number of atoms/m³ and αe is electronic...
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. In a metal, the valence electrons
View solution
Q. All magnetic materials exhibit the phenomenon of saturation.
View solution
Q. On the basis of the type of chemical bonds, solids may be classified into
View solution
Q. The units for intrinsic strength of dielectric are
View solution
Q. Specific resistance of silver is about
View solution
Q. The v-i relation for an arc is v = 44 + 30/i . If v = 50 V, i =
View solution
Q. Assertion (A): If an electron having charge e is revolving in an orbit of radius R and with angular velocity ω, the magnetic dipole moment of orbit is 0.5 eωR².
Reason (R): Orbital angular momentum and magnetic dipole moment are always equal.
View solution
Q. Assertion (A): A capacitor with imperfect dielectric can be represented by a capacitance in parallel with resistance.
Reason (R): For imperfect dielectrics, dielectric constant has real and imaginary parts.
View solution
Q. An atom of a rare gas is placed is an electric field E. Then
View solution
Q. In van der walls crystals, there exists a high degree of stability of the outer electron shell.
View solution
Q. As per temperature limits, the number of categories of solid dielectrics are
View solution
Q. At room temperature the number of conducting electrons in an intrinsic semiconductor
View solution
Q. Assertion (A): The angular momentum of an atom is due to three contributions viz. orbital, electron spin and nuclear spin.
Reason (R): The nuclear spin magnetic moment is much more than electron spin magnetic moment.
View solution
Q. If WF is the Fermi level, then in a metal at T = 0
View solution
Q. Silicon and germanium have diamond structure. The number of atoms in a volume equal to a³ where a is the edge of elementary cube are
View solution
Q. If the radius of electron cloud around the nucleus of a rare gas atom is R, the electronic polarizability of the atom is porportional to
View solution
Q. By inserting a plate of dielectric between the plates of a parallel plate capacitor, the energy stored in the capacitor is increased five times. The dielectric constant of material is
View solution
Q. Debye temperature of metals is
View solution
Q. As the viscosity of a liquid increases, the relaxation time
View solution
Q. A wire is carrying current I. The field intensity H at a distance r from the wire
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
