Q. Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are

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Q. The circuit shown in the figure is best described as a

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Q. The current density J, free electron mobility μn, hole mobility μp , magnitude of free electron and hole concentration ni electric field E and charge on electron e, in intrinsic semiconductor are related as

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Q. In bipolar transistors dc current gain is

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Q. Which is correct for a vacuum triode?

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Q. Figure represents a

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Q. To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.

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Q. Hall coefficient KH and charge density ρ are related as

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Q. In p type semiconductors the conduction due to holes ( = σp ) is (where e = charge on hole, μp is hole mobility and ρ is hole concentration)

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Q. The Ebers-moll equation for IE in CB configuration is given by

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Q. The small signal input impedance of a transistor whose output is shorted for the measuring signal is

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Q. The dipole moment per unit volume as a function of E in the case of an insulator is given by (symbols have the usual meaning).

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Q. The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading is

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Q. The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be concluded that

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Q. Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?

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Q. Figure represents a

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Q. Figure shows the terminals of a transistor in plastic package TO 18. Then

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Q. The network shown in the figure represents a

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Q. In a junction transistor biased for operation at emitter current 'IE' and collector current 'IC' the transconductance 'gm' is.

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Q. CE saturation resistance of n-p-n transistor is

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