Q. The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be concluded that

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Q. Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?

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Q. Figure represents a

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Q. Figure shows the terminals of a transistor in plastic package TO 18. Then

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Q. The network shown in the figure represents a

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Q. In a junction transistor biased for operation at emitter current 'IE' and collector current 'IC' the transconductance 'gm' is.

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Q. CE saturation resistance of n-p-n transistor is

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Q. Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :

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Q. R.M.S. value of the waveform shown will be

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Q. For a UJT if

R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2,

then the intrinsic stand off ratio (η) is

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Q. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)

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Q. Ripple factor is

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Q. Figure represents a

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Q. A p-n junction diode has

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Q. Which of the following is true as regards photo emission?

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Q. The power dissipation in a transistor is the product of

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Q. The normal operation of JFET is

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Q. The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm²/sec. The diffusion length is

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Q. At room temperature the current in an intrinsic semiconductor is due to

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Q. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

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