Q. The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm²/sec. The diffusion length is

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Q. At room temperature the current in an intrinsic semiconductor is due to

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Q. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

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Q. The most commonly used semiconductor material is

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Q. In which of these is reverse recovery time nearly zero?

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Q. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

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Q. Secondary emission is always decremental.

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Q. In a degenerate n type semiconductor material, the Fermi level,

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Q. The types of carriers in a semiconductor are

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Q. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is

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Q. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

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Q. Recombination produces new electron-hole pairs

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Q. An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is

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Q. As compared to an ordinary semiconductor diode, a Schottky diode

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Q. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.

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Q. As compared to an ordinary semiconductor diode, a Schottky diode

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Q. At very high temperatures the extrinsic semi conductors become intrinsic because

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Q. When a voltage is applied to a semiconductor crystal then the free electrons will flow.

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Q. Ferrite have

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Q. In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be

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