Q. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

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Q. Recombination produces new electron-hole pairs

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Q. An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is

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Q. As compared to an ordinary semiconductor diode, a Schottky diode

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Q. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.

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Q. As compared to an ordinary semiconductor diode, a Schottky diode

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Q. At very high temperatures the extrinsic semi conductors become intrinsic because

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Q. When a voltage is applied to a semiconductor crystal then the free electrons will flow.

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Q. Ferrite have

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Q. In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be

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Q. In an n-p-n transistor, the majority carriers in the base are

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Q. An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

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Q. The number of doped regions in PIN diode is

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Q. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

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Q. In a bipolar transistor the barrier potential

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Q. Crossover distortion behaviour is characteristic of

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Q. If aac for transistor is 0.98 then βac is equal to

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Q. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

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Q. In an n-p-n transistor biased for operation in forward active region

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Q. An increase in temperature increases the width of depletion layer.

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