Question

An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

a.

0 to 200 Ω

b.

200 - 400 Ω

c.

200 Ω and above

d.

400 Ω and above

Answer: (d).400 Ω and above

Interact with the Community - Share Your Thoughts

Uncertain About the Answer? Seek Clarification Here.

Understand the Explanation? Include it Here.

Q. An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

Similar Questions

Explore Relevant Multiple Choice Questions (MCQs)

Q. The number of doped regions in PIN diode is

Q. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

Q. In a bipolar transistor the barrier potential

Q. Crossover distortion behaviour is characteristic of

Q. If aac for transistor is 0.98 then βac is equal to

Q. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

Q. In an n-p-n transistor biased for operation in forward active region

Q. An increase in temperature increases the width of depletion layer.

Q. Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.

Q. A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is

Q. Work function of oxide coated cathode is much lower than that of tungsten cathode.

Q. The word enhancement mode is associated with

Q. In which region of a CE bipolar transistor is collector current almost constant?

Q. A zener diode is used in

Q. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.

Q. In a zener diode

Q. In a bipolar transistor which current is largest

Q. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

Q. In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then

Q. In an n channel JFET, the gate is

Recommended Subjects

Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.

Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!