Q. The amount of photoelectric emission current depends on

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Q. Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

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Q. The drain characteristics of JFET in operating region, are

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Q. As temperature increases

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Q. When a reverse bias is applied to a p-n junction, the width of depletion layer.

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Q. The Hall constant in Si bar is given by 5 x 103 cm³/ coulomb, the hole concentration in the bar is given by

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Q. Which of the following devices has a silicon dioxide layer?

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Q. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

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Q. The concentration of minority carriers in a semiconductor depends mainly on

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Q. Which of the following has highest conductivity?

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Q. In a bipolar junction transistor the base region is made very thin so that

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Q. Compared to bipolar junction transistor, a JFET has

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Q. An incremental model of a solid state device is one which represents the

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Q. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor?

1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. E pi-layer formation

Select the correct answer using the codes given below:

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Q. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will

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Q. Which of the following is used for generating time varying wave forms?

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Q. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 10¹² cm¯³. Density of electrons = 8 x 10¹³ cm¯³, mobility of conduction electron = 2.3 x 10⁴ cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

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Q. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus

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Q. In an n channel JFET

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Q. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹⁶/m³. If after doping, the number of majority carriers is 5 x 10²ᴼ/m³. The minority carrier density is

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