Question
a.
log I Vs log V
b.
log I Vs V
c.
I Vs log V
d.
I Vs V
Posted under Electronics and Communication Engineering
Interact with the Community - Share Your Thoughts
Uncertain About the Answer? Seek Clarification Here.
Understand the Explanation? Include it Here.
Q. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus
Similar Questions
Explore Relevant Multiple Choice Questions (MCQs)
Q. In an n channel JFET
View solution
Q. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹⁶/m³. If after doping, the number of majority carriers is 5 x 10²ᴼ/m³. The minority carrier density is
View solution
Q. A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average power dissipated is
View solution
Q. Which statement is false as regards holes
View solution
Q. Photo electric emission can occur only if
View solution
Q. The reverse saturation current of a diode does not depend on temperature.
View solution
Q. In a piezoelectric crystal, application of a mechanical stress would produce
View solution
Q. The value of α in a transistor
View solution
Q. The amount of photoelectric emission current depends on the frequency of incident light.
View solution
Q. When a p-n junction is forward biased
View solution
Q. The carriers of n channel JFET are
View solution
Q. The depletion layer around p-n junction in JFET consists of
View solution
Q. Junction temperature is always the same as room temperature.
View solution
Q. Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
View solution
Q. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.
View solution
Q. If αac for transistor is 0.98 then βac is equal to
View solution
Q. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
View solution
Q. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10¯³⁴ J sec.
View solution
Q. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.
View solution
Q. The value of a in a transistor
View solution
Recommended Subjects
Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.
Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!
