Q. The drain characteristics of JFET in operating region, are

View solution

Q. As temperature increases

View solution

Q. When a reverse bias is applied to a p-n junction, the width of depletion layer.

View solution

Q. The Hall constant in Si bar is given by 5 x 103 cm³/ coulomb, the hole concentration in the bar is given by

View solution

Q. Which of the following devices has a silicon dioxide layer?

View solution

Q. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

View solution

Q. The concentration of minority carriers in a semiconductor depends mainly on

View solution

Q. Which of the following has highest conductivity?

View solution

Q. In a bipolar junction transistor the base region is made very thin so that

View solution

Q. Compared to bipolar junction transistor, a JFET has

View solution

Q. An incremental model of a solid state device is one which represents the

View solution

Q. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor?

1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. E pi-layer formation

Select the correct answer using the codes given below:

View solution

Q. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will

View solution

Q. Which of the following is used for generating time varying wave forms?

View solution

Q. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 10¹² cm¯³. Density of electrons = 8 x 10¹³ cm¯³, mobility of conduction electron = 2.3 x 10⁴ cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

View solution

Q. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus

View solution

Q. In an n channel JFET

View solution

Q. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹⁶/m³. If after doping, the number of majority carriers is 5 x 10²ᴼ/m³. The minority carrier density is

View solution

Q. A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average power dissipated is

View solution

Q. Which statement is false as regards holes

View solution