Q. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will

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Q. Which of the following is used for generating time varying wave forms?

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Q. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 10¹² cm¯³. Density of electrons = 8 x 10¹³ cm¯³, mobility of conduction electron = 2.3 x 10⁴ cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

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Q. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus

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Q. In an n channel JFET

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Q. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹⁶/m³. If after doping, the number of majority carriers is 5 x 10²ᴼ/m³. The minority carrier density is

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Q. A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average power dissipated is

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Q. Which statement is false as regards holes

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Q. Photo electric emission can occur only if

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Q. The reverse saturation current of a diode does not depend on temperature.

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Q. In a piezoelectric crystal, application of a mechanical stress would produce

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Q. The value of α in a transistor

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Q. The amount of photoelectric emission current depends on the frequency of incident light.

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Q. When a p-n junction is forward biased

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Q. The carriers of n channel JFET are

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Q. The depletion layer around p-n junction in JFET consists of

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Q. Junction temperature is always the same as room temperature.

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Q. Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

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Q. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

Reason (R): High reverse voltage causes Avalanche effect.

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Q. If αac for transistor is 0.98 then βac is equal to

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