Q. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

View solution

Q. The concentration of minority carriers in a semiconductor depends mainly on

View solution

Q. Which of the following has highest conductivity?

View solution

Q. In a bipolar junction transistor the base region is made very thin so that

View solution

Q. Compared to bipolar junction transistor, a JFET has

View solution

Q. An incremental model of a solid state device is one which represents the

View solution

Q. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor?

1. Emitter diffusion
2. Base diffusion
3. Buried layer formation
4. E pi-layer formation

Select the correct answer using the codes given below:

View solution

Q. For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (VSB > 0), the threshold voltage VT of the MOSFET will

View solution

Q. Which of the following is used for generating time varying wave forms?

View solution

Q. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 10¹² cm¯³. Density of electrons = 8 x 10¹³ cm¯³, mobility of conduction electron = 2.3 x 10⁴ cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

View solution

Q. The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus

View solution

Q. In an n channel JFET

View solution

Q. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹⁶/m³. If after doping, the number of majority carriers is 5 x 10²ᴼ/m³. The minority carrier density is

View solution

Q. A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average power dissipated is

View solution

Q. Which statement is false as regards holes

View solution

Q. Photo electric emission can occur only if

View solution

Q. The reverse saturation current of a diode does not depend on temperature.

View solution

Q. In a piezoelectric crystal, application of a mechanical stress would produce

View solution

Q. The value of α in a transistor

View solution

Q. The amount of photoelectric emission current depends on the frequency of incident light.

View solution