Q. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

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Q. In an n-p-n transistor biased for operation in forward active region

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Q. An increase in temperature increases the width of depletion layer.

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Q. Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.

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Q. A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is

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Q. Work function of oxide coated cathode is much lower than that of tungsten cathode.

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Q. The word enhancement mode is associated with

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Q. In which region of a CE bipolar transistor is collector current almost constant?

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Q. A zener diode is used in

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Q. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.

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Q. In a zener diode

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Q. In a bipolar transistor which current is largest

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Q. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

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Q. In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then

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Q. In an n channel JFET, the gate is

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Q. The amount of photoelectric emission current depends on

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Q. Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

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Q. The drain characteristics of JFET in operating region, are

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Q. As temperature increases

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Q. When a reverse bias is applied to a p-n junction, the width of depletion layer.

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