Q. In which region of a CE bipolar transistor is collector current almost constant?

View solution

Q. A zener diode is used in

View solution

Q. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.

View solution

Q. In a zener diode

View solution

Q. In a bipolar transistor which current is largest

View solution

Q. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

View solution

Q. In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then

View solution

Q. In an n channel JFET, the gate is

View solution

Q. The amount of photoelectric emission current depends on

View solution

Q. Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

View solution

Q. The drain characteristics of JFET in operating region, are

View solution

Q. As temperature increases

View solution

Q. When a reverse bias is applied to a p-n junction, the width of depletion layer.

View solution

Q. The Hall constant in Si bar is given by 5 x 103 cm³/ coulomb, the hole concentration in the bar is given by

View solution

Q. Which of the following devices has a silicon dioxide layer?

View solution

Q. For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

View solution

Q. The concentration of minority carriers in a semiconductor depends mainly on

View solution

Q. Which of the following has highest conductivity?

View solution

Q. In a bipolar junction transistor the base region is made very thin so that

View solution

Q. Compared to bipolar junction transistor, a JFET has

View solution