Q. R.M.S. value of the waveform shown will be

View solution

Q. For a UJT if

R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2,

then the intrinsic stand off ratio (η) is

View solution

Q. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)

View solution

Q. Ripple factor is

View solution

Q. Figure represents a

View solution

Q. A p-n junction diode has

View solution

Q. Which of the following is true as regards photo emission?

View solution

Q. The power dissipation in a transistor is the product of

View solution

Q. The normal operation of JFET is

View solution

Q. The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm²/sec. The diffusion length is

View solution

Q. At room temperature the current in an intrinsic semiconductor is due to

View solution

Q. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

View solution

Q. The most commonly used semiconductor material is

View solution

Q. In which of these is reverse recovery time nearly zero?

View solution

Q. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

View solution

Q. Secondary emission is always decremental.

View solution

Q. In a degenerate n type semiconductor material, the Fermi level,

View solution

Q. The types of carriers in a semiconductor are

View solution

Q. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is

View solution

Q. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

View solution