Q. For a UJT if

R1 = Resistor from emitter to the base 1
R2 = Resistor from emitter to the base 2 and RBB = R1 + R2,

then the intrinsic stand off ratio (η) is

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Q. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)

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Q. Ripple factor is

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Q. Figure represents a

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Q. A p-n junction diode has

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Q. Which of the following is true as regards photo emission?

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Q. The power dissipation in a transistor is the product of

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Q. The normal operation of JFET is

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Q. The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm²/sec. The diffusion length is

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Q. At room temperature the current in an intrinsic semiconductor is due to

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Q. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

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Q. The most commonly used semiconductor material is

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Q. In which of these is reverse recovery time nearly zero?

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Q. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

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Q. Secondary emission is always decremental.

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Q. In a degenerate n type semiconductor material, the Fermi level,

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Q. The types of carriers in a semiconductor are

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Q. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is

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Q. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

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Q. Recombination produces new electron-hole pairs

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