Q. In a self bias circuit for CE amplifier, the emitter resistance is made three times the original value. The collector current will

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Q. A P-channel MOSFET operating in the enhancement mode is characterized by Vt = - 4 V and IDQ = - 10 mA, when VGSQ = - 5.5 V, what will be VGSQ if IDQ = -15 mA and ID, on = - 16 mA

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Q. In a transistor E mode the collector current with the transistor in cut off region is

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Q. Two CE stages, 1 and 2 are coupled through a capacitor. VCC is the same for both. Base resistances RB1 and RB2 are such that RB1 > RB2. Then

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Q. In a two stage CE amplifier circuit, the ac collector resistance of the first stage depends on

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Q. In a CE amplifier the ac cut off voltage is 9 V and slope of ac load line is - 0.5 mA/V. The ac saturation current is

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Q. A differential amplifier consists of two CB amplifiers.

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Q. A power transistor dissipates 5 W. If ambient temperature is 30° and case to air thermal resistance is 10° C/W, the case temperature is

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Q. An R-C coupled amplifier has mid-frequency gain of 200 and a frequency response from 100 Hz to 20 kHz. A negative feedback network with β = 0.2 is incorporated into the amplifier circuit, the Bandwidth will be

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Q. A full wave rectifier circuit using centre tapped transformer and a bridge rectifier are fed at 100 V, 50 Hz. The frequencies of outputs in these two rectifiers are

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Q. When the ac base voltage in a CE amplifier circuit is too high, the ac emitter current is

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Q. When load is coupled to class A amplifier through transformer, efficiency decreases.

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Q. The gain of an FET amplifier can be changed by changing

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Q. The open loop gain of an actual op-amp is about 100.

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Q. The units of transistor h parameters h11 and h22 are the same.

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Q. Positive feedback is mainly used in

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Q. For a BJT if β = 50, ICEO = 3 μA and IC = 1.2 mA then IB

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Q. The main application of enhancement mode MOSFET is in

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Q. In a commercially available good power supply the voltage regulation is about

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Q. The most commonly used bias in BJT amplifier circuits is

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