Q. A three-section RC phase shift oscillator has R = 10K ohms and C = 0.001 μF. If the oscillator is to be made variable using the same value of R, what should be the value of capacitor to obtain a frequency if 1 kHz?

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Q. The input to negative clamper has a peak value of Vp. Then in the output the positive and negative peaks are nearly

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Q. In a common Emitter BJT amplifier, the maximum usable supply voltage is limited by

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Q. High frequency oscillations can be caused by

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Q. A feedback network to be used with an amplifier to provide oscillation is tested and found to give an output of 0.124 V with a 0.5 V input. What will be the effect on output if the amplifier's gain is twice that required by the Barkhausen criterion?

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Q. A transistor in CE mode is in saturation region. Then the collector is almost at

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Q. The semi-conductor type 2 N 34 indicates

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Q. The emitter bias largely depends on

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Q. A limiter circuit can be built using a diode and resistance.

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Q. In saturation region JFET acts like a

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Q. FET can used in

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Q. Each of two cascaded stages has a voltage gain of 30. The overall gain is

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Q. A two stage amplifier has an upper cutoff frequency of 2 MHz and a lower cutoff frequency of 2 MHz and a lower cut off frequency of 30 Hz. If both stages are similar, their individual upper and lower cut off frequencies respectively are

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Q. A bipolar transistor is a __________ controlled devices whereas a FET is a __________ controlled devices.

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Q. The input impedance of a non-inverting amplifier is very low.

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Q. RC oscillator can be used upto

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Q. In a N-P-N transistor of the emitter junction is reverse biased and collector junction is also reversed biased, the transistor will operate in

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Q. Wide banding technique is employed in the

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Q. Assertion (A): The maximum efficiency of a class B push pull amplifier is 78.5%

Reason (R): A current mirror uses a compensating diode in parallel with the emitter diode

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Q. Which of the following are difficult to be fabricated in a monolithic IC?

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