Q. In switching devices, gold doping is used to

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Q. Assertion (A): If power gain doubles the power gain increases by 3 dB

Reason (R): The bel power gain of cascaded stages is equal to sum of each bel power gain

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Q. The V MOS can handle __________ currents than a conventional MOSFET.

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Q. Assertion (A): A resistor is a passive load and a transistor is an active load

Reason (R): Op-amp is mostly used in feedback mode

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Q. Which mode is usually preferred for cascading?

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Q. In a transistor leakage current mainly depends on

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Q. In a CB amplifier the maximum efficiency could be

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Q. Assertion (A): As per Miller theorem a capacitance C from input to output appears as a much larger capacitance across input terminals

Reason (R): In a lag network the output voltage appears across capacitor

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Q. When a transistor is connected in common emitter mode, it with have

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Q. The noise figure of FET circuit is

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Q. The encapsulation of transistor is necessary for

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Q. In CE approximately, the active region is where the collector curves are

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Q. A certain transistor has αdc of 0.98 and a collectors leakage current of 5 μA. If IE = 1 mA, the base current will be

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Q. The signal input to a given amplifier is made up of 100 mΩ signal power and 1 mΩ noise power. The amplifier contributes an additional 100 mΩ of noise and has a power gain of 20 dB. The input signal-to noise ratio is

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Q. Assertion (A): A good op-amp should have very large band width

Reason (R): An ideal op-amp should have infinite input resistance and zero output resistance

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Q. In all base driver amplifiers

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Q. The horizontal intercept of dc load line is the same as ideal

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Q. In a BJT amplifier circuit the size of coupling capacitor depends on

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Q. A silicon sample A is doped with 10¹⁸ Atoms/cm³ of Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

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Q. Which of the following circuit has the greatest bandwidth?

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