Q. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of

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Q. Which of these has degenerate p and n materials?

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Q. A Schottky diode clamp is used along with switching BJT for

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Q. In a piezoelectric crystal, applications of a mechanical stress would produce

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Q. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor? Emitter diffusionBase diffusionBuried layer formationE pi-layer formation Select the correct answer using the codes given below:

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Q. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

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Q. A semiconductor diode is biased in forward direction and carrying current I. The current due to holes in p material is

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Q. Between which regions does BJT act like switch?

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Q. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.

Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.

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Q. Which of the following elements act as donor impurities?

1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium

Select the answer using the following codes :

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Q. Light dependent resistor is

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Q. The derating factor for a BJT transistor is about

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Q. An intrinsic silicon sample has 2 million free electrons. The number of holes in the sample is

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Q. Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.

Reason (R): Capacitance of any layer is inversely proportional to thickness.

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Q. In an n type semiconductor

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Q. Mobility of electrons and holes are equal.

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Q. Which of the following is basically a voltage controlled capacitance?

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Q. When the i-v curve of a photodiode passes through origin the illumination is

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Q. An n type silicon bar 0.1 cm long and 100 μm² in cross-sectional area has a majority carrier concentration of 5 x 10²ᴼ/m³ and the carrier mobility is 0.13 mᴼ/V-s at 300k. If the charge of an electron is 1.6 x 10¯¹⁹ coulomb, then the resistance of the bar is

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Q. The threshold voltage of a MOSFET can be lowered by

1. using thin gate oxide
2. reducing the substrate concentration
3. increasing the substrate concentration.

Of the above statement

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