Q. For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in illumination results in

View solution

Q. The number of p-n junctions in a semiconductor diode are

View solution

Q. Assertion (A): A high junction temperature may destroy a diode.

Reason (R): As temperature increases the reverse saturation current increases.

View solution

Q. A Si sample is doped with a fixed number of group N impurities. The electron density n is measured from 4 K to 1200 k for the sample. Which one of the following is correct?

View solution

Q. Assertion (A): In design of circuit using BJT, a derating factor is used.

Reason (R): As the ambient temperature increases, heat dissipation becomes slower.

View solution

Q. If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is

View solution

Q. In a P type silicon sample, the hole concentration is 2.25 x 10¹⁵ / cm³. If the intrinsic carrier concentration is 1.5 x 10¹ᴼ/ cm³ the electron concentration is

View solution

Q. The behaviour of a JFET is similar to that of

View solution

Q. Dielectric strength of polythene is around

View solution

Q. Resistivity of hard drawn copper is

View solution

Q. The channel of JFET consists of

View solution

Q. In a bipolar junction transistor αdc = 0.98, ICO= 2 μA and 1B = 15 μA. The collector current IC is

View solution

Q. The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be

View solution

Q. As temperature increases the forbidden gap in silicon increases.

View solution

Q. Assertion (A): Germanium is more commonly used than silicon.

Reason (R): Forbidden gap in germanium is less than that in silicon.

View solution

Q. Which of the following devices has substrate?

View solution

Q. Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.

Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.

View solution

Q. In degenerate p type semiconductor material, the Fermi level,

View solution

Q. Consider the following statements: The function of oxide layer in an IC device is to

1. mask against diffusion or non implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer

Of these statements:

View solution

Q. An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is

View solution