Q. In a varactor diode the increase in width of depletion layer results in

View solution

Q. The work function of a photo surface whose threshold wave length is 1200 A, will be

View solution

Q. Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and VT = 0.7 V

View solution

Q. At room temperature the barrier potential in a silicon diode is

View solution

Q. The cut in voltage of a diode is nearly equal to

View solution

Q. Assertion (A): In a BJT base current is very small.

Reason (R): In a BJT recombination in base region is high.

View solution

Q. A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is

View solution

Q. The diameter of an atom is

View solution

Q. N-type silicon is obtained by doping silicon with

View solution

Q. When a p-n junction is reverse biased

View solution

Q. If a sample of germanium and a sample of Si have the impurity density and are kept at room temperature then

View solution

Q. When a large number of atoms are brought together to form a crystal

View solution

Q. What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?

View solution

Q. As temperature increases the number of free electrons and holes in an intrinsic semiconductor

View solution

Q. At room temperature kT = 0.03 eV.

View solution

Q. Assertion (A): A JFET behaves as a resistor when VGS < VP.

Reason (R): When VGS < VP, the drain current in a JFET is almost constant.

View solution

Q. In a reverse biased P-N junction, the current through the junction increases abruptly at

View solution

Q. As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode

View solution

Q. In active filter circuits, inductances are avoided mainly because they

View solution

Q. When a p-n-p transistor is operating in active region, the current in the n region is due to

View solution