Question

When a large number of atoms are brought together to form a crystal

a.

the energy levels of inner shell electrons are affected appreciably by the presence of other neighbouring atoms.

b.

The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

c.

the energy levels of both inner and outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

d.

none of the above.

Answer: (b).The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.

Interact with the Community - Share Your Thoughts

Uncertain About the Answer? Seek Clarification Here.

Understand the Explanation? Include it Here.

Q. When a large number of atoms are brought together to form a crystal

Similar Questions

Explore Relevant Multiple Choice Questions (MCQs)

Q. What is the effect of cut in voltage on the wave form of output as compared to input in a semiconductor diode?

Q. As temperature increases the number of free electrons and holes in an intrinsic semiconductor

Q. At room temperature kT = 0.03 eV.

Q. Assertion (A): A JFET behaves as a resistor when VGS < VP.

Reason (R): When VGS < VP, the drain current in a JFET is almost constant.

Q. In a reverse biased P-N junction, the current through the junction increases abruptly at

Q. As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode

Q. In active filter circuits, inductances are avoided mainly because they

Q. When a p-n-p transistor is operating in active region, the current in the n region is due to

Q. In a JFET

Q. Fermi level in intrinsic semiconductor is at the centre of forbidden energy band.

Q. In a photo transistor the photocurrent is

Q. In photoelectric emission the maximum kinetic energy of emitted electron is proportional to

Q. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resulting electric field inside the speciment will be in

Q. In a p-n-p transistor operating in forward active mode

Q. Consider the following statements.

1. Etching
2. Exposure to UV radiation
3. Stripping
4. Developing

After a wafer has been coated with photo resist the correct sequence of these steps in photolithography is

Q. If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

Q. In a triode the potential of grid (with respect to cathode) is usually

Q. A varactor diode is

Q. The output v-i characteristics of enhancement type MOSFET has

Q. In a full wave rectifier, the current in each of the diodes flows for

Recommended Subjects

Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.

Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!