Q. A varactor diode is

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Q. The output v-i characteristics of enhancement type MOSFET has

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Q. In a full wave rectifier, the current in each of the diodes flows for

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Q. In an ideal junction transistor the impurity concentration in emitter (E ), base (B) and collector (C) is such that

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Q. The rating of a transformer to deliver 100 watts of D.C. power to a load under half wave rectifier will be nearly

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Q. When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.

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Q. Which of the following is known as insulated gate FET?

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Q. Assertion (A): The hybrid π model of a transistor can be reduced to h parameter model and vice versa.

Reason (R): Hybrid π and h parameter models are interrelated as both of them describe the same device.

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Q. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?

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Q. An insulator will conduct when the

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Q. Zener breakdown occurs

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Q. Which rectifier has the best ratio of rectification?

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Q. Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

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Q. In an integrated circuit the SiO₂ layers provide

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Q. For a n-channel JFET with r₀ = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

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Q. Which of the following are voltage controlled devices?

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Q. In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.

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Q. A P-N junction offers

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Q. In modern MOSFETs, the material used for the gate is

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Q. Consider the following circuit configuration

1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.

The correct sequence in increasing order of I/P impedance of these configuration:

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