Question

Assertion (A): The hybrid π model of a transistor can be reduced to h parameter model and vice versa.

Reason (R): Hybrid π and h parameter models are interrelated as both of them describe the same device.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Answer: (a).Both A and R are true and R is correct explanation of A

Interact with the Community - Share Your Thoughts

Uncertain About the Answer? Seek Clarification Here.

Understand the Explanation? Include it Here.

Q. Assertion (A): The hybrid π model of a transistor can be reduced to h parameter model and vice versa. Reason (R): Hybrid π and h parameter models are interrelated as both of...

Similar Questions

Explore Relevant Multiple Choice Questions (MCQs)

Q. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?

Q. An insulator will conduct when the

Q. Zener breakdown occurs

Q. Which rectifier has the best ratio of rectification?

Q. Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

Q. In an integrated circuit the SiO₂ layers provide

Q. For a n-channel JFET with r₀ = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

Q. Which of the following are voltage controlled devices?

Q. In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.

Q. A P-N junction offers

Q. In modern MOSFETs, the material used for the gate is

Q. Consider the following circuit configuration

1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.

The correct sequence in increasing order of I/P impedance of these configuration:

Q. Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.

Q. The maximum power handling capacity of a resistor depends on

Q. Epitaxial growth is used in ICs

Q. The mean life time of carrier may range from 10¯⁹ seconds to hundreds of μ-seconds.

Q. In which mode of BJT operation are both junctions forward biased?

Q. Addition of a small amount of antimony to germanium will result in

Q. The ratio of diffusion constant for hole DP to the mobility for holes is proportional to

Q. The carrier mobility in a semiconductor is 0.4 m²/Vs. Its diffusion constant at 300k will be (in m²/s).

Recommended Subjects

Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.

Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!