Q. In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.

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Q. A P-N junction offers

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Q. In modern MOSFETs, the material used for the gate is

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Q. Consider the following circuit configuration

1. common Emitter
2. common Base
3. emitter follower
4. emitter follower using Darlington pair.

The correct sequence in increasing order of I/P impedance of these configuration:

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Q. Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.

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Q. The maximum power handling capacity of a resistor depends on

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Q. Epitaxial growth is used in ICs

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Q. The mean life time of carrier may range from 10¯⁹ seconds to hundreds of μ-seconds.

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Q. In which mode of BJT operation are both junctions forward biased?

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Q. Addition of a small amount of antimony to germanium will result in

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Q. The ratio of diffusion constant for hole DP to the mobility for holes is proportional to

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Q. The carrier mobility in a semiconductor is 0.4 m²/Vs. Its diffusion constant at 300k will be (in m²/s).

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Q. During induction heating of metals which of the following is abnormally high?

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Q. Assertion (A): Alkali metals are used as emitters in phototubes.

Reason (R): Alkali metals have low work functions.

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Q. A JFET operates in ohmic region when

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Q. In CE connection, the leakage current of a transistor is about

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Q. The early effect in a BJT is caused by

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Q. In a common emitter BJT amplifier, the maximum usable supply voltage is limited by

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Q. Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.

Reason (R): Base current in CE connection is very small.

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Q. The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic emission current is about

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