Q. In CE connection, the leakage current of a transistor is about

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Q. The early effect in a BJT is caused by

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Q. In a common emitter BJT amplifier, the maximum usable supply voltage is limited by

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Q. Assertion (A): In active region of CE output characteristics of BJT, collector current is nearly constant.

Reason (R): Base current in CE connection is very small.

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Q. The temperature of cathode is increased from 2500K to 2600K. The increase in thermionic emission current is about

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Q. Consider the following statement:

At finite temperature, magnetic dipoles in a material are randomly oriented giving low magnetization. When magnetic field H is applied, the magnetization?

1. Increases with H
2. Decreases with H
3. Decreases with temp for constant H

Which of the statement given above is/are correct?

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Q. Ferrites have

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Q. Eg is the band gap, A is pre-factor, k is Boltzmann constant? Which one of the following is the remaining grade of paper used in paper capacitor, besides the other two grade of paper-low and extra low loss?

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Q. Barkhausen criterion of oscillation is

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Q. In a p-n-p transistor the main current carriers and the mechanism of flow respectively are

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Q. Secondary emission occurs in

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Q. In common base connection, the output characteristics of a bipolar junction transistor is drawn between

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Q. In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually

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Q. For generating 1 MHz frequency signal, the most suitable circuit is

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Q. A doped semi-conductor is called

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Q. In n type MOSFET, the substrate

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Q. The first and the last critical frequency of an RC driving point impedance function must respectively by

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Q. The diffusion current is proportional to

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Q. The conductivity of materials found in nature ranges from 10⁹ ohm¯¹m¯¹ to nearly 10¹⁸ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly

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Q. At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called

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