Q. A doped semi-conductor is called

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Q. In n type MOSFET, the substrate

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Q. The first and the last critical frequency of an RC driving point impedance function must respectively by

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Q. The diffusion current is proportional to

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Q. The conductivity of materials found in nature ranges from 10⁹ ohm¯¹m¯¹ to nearly 10¹⁸ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly

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Q. At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called

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Q. Which of the following statement about the photo electric emission is incorrect?

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Q. In a semiconductor avalanche breakdown occurs when

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Q. In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

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Q. Which quantity controls the effectiveness of LED in emitting light?

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Q. The current gain of a BJT is

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Q. Ferromagnetic materials exhibit

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Q. The saturation current in a semi-conductor diode

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Q. In P-N junction, the region containing the uncompensated acceptor and donor ions is called

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Q. In a photodiode the current is due to

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Q. Consider the following statements:

1. Acceptor level lies close the valence band.
2. Donor level lies close to the valence band.
3. n type semiconductor behaves as an insulator at 0 K.
4. p type semiconductor behaves as an insulator at 0 K.

Of these statements:

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Q. If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

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Q. Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

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Q. Consider the following statements about diamagnetic material and diamagnetism.

1. The materials have negative magnetic susceptibility.
2. At very low temperature diamagnetic materials.

Which of the statements given above is/are correct?

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Q. In a photo emissive device and emission efficiency is increased by

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