Q. In a photodiode the current is due to

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Q. Consider the following statements:

1. Acceptor level lies close the valence band.
2. Donor level lies close to the valence band.
3. n type semiconductor behaves as an insulator at 0 K.
4. p type semiconductor behaves as an insulator at 0 K.

Of these statements:

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Q. If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

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Q. Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

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Q. Consider the following statements about diamagnetic material and diamagnetism.

1. The materials have negative magnetic susceptibility.
2. At very low temperature diamagnetic materials.

Which of the statements given above is/are correct?

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Q. In a photo emissive device and emission efficiency is increased by

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Q. Materials in order of decreasing electrical conductivity are

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Q. Transconductance characteristics of JFET depict the relation between

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Q. The resistivity of intrinsic semiconductor material is about

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Q. Which of the following exhibits negative resistance in a portion of its characteristics?

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Q. The emission of light is LED due to

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Q. The sum of two or more arbitrary sinusoidal is

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Q. Which of the following is used as a passive component in electronic circuits?

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Q. When a ferromagnetic substance is magnetised, there are small changes in its dimensions. This phenomenon is called

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Q. Gold is often diffused into silicon PN junction devices to

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Q. Assertion (A): FET is a unipolar device.

Reason (R): BJT is bipolar device.

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Q. Ferrites are

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Q. High purity copper is obtained by

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Q. Photo electric emission can occur only if the frequency of light is more than threshold frequency.

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Q. In a JFET the width of channel is controlled by

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